Luminescence of Quasi-2DEG in Heterostructures Based on PbS Films

Luminescence of Quasi-2DEG in Heterostructures Based on PbS Films

The paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 micrometers thickness) and zinc selenide substrates surrounded by th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Khlyap, G
Format: Report
Sprache:eng
Schlagworte:
COMPONENT REPORT
DOPING
ELECTROLUMINESCENCE
FOREIGN REPORTS
HETEROJUNCTIONS
LEAD SULFIDES
LUMINESCENCE
Optics
PHOTOLUMINESCENCE
QUANTUM WELLS
Solid State Physics
THIN FILMS
UKRAINE
WIDE GAP SEMICONDUCTORS
ZINC SELENIDES
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Beschreibung
Zusammenfassung:The paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 micrometers thickness) and zinc selenide substrates surrounded by the wide gap semiconductor region. The processes of electro- and photoluminescence are studied, the band diagram is proposed and the main parameters of the structure PbS/quasi-2DEG/ZnSe are calculated. Pub in: Materials Research Society Symposium Proceedings, Volume 692. This article is from ADA405047 Progress in Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001.