A High contrast, Low Insertion Loss Asymmetric Fabry Perot Modulator Operating at 4.1 Volts

A very high contrast (>2OdB), low insertion loss ( 3.3dB) GaAs/AlGaAs multiple quantum well (MQW) reflection modulator with an operating voltage of -9V reverse bias has recently been demonstrated. The device was electrically a p-i-n diode with the MQW in the intrinsic region, and optically an asy...

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Bibliographische Detailangaben
Hauptverfasser:	Zouganeli, P, Whitehead, M, Stevens, P.J, Rivers, A, Parry, G
Format:	Report
Sprache:	eng
Schlagworte:	AIMING AIR ALUMINUM GALLIUM ARSENIDES BIAS CAVITIES Component Reports CONTRAST Electrooptical and Optoelectronic Devices FABRY PEROT INTERFEROMETERS GALLIUM ARSENIDES GREAT BRITAIN INSERTION LOSS INTERFACES LIGHT MODULATORS MIRRORS Multiple quantum wells Quantum wells REDUCTION REFLECTION REFLECTIVITY REFLECTORS SEMICONDUCTOR DIODES SEMICONDUCTORS VOLTAGE
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Beschreibung
Zusammenfassung:	A very high contrast (>2OdB), low insertion loss ( 3.3dB) GaAs/AlGaAs multiple quantum well (MQW) reflection modulator with an operating voltage of -9V reverse bias has recently been demonstrated. The device was electrically a p-i-n diode with the MQW in the intrinsic region, and optically an asymmetric Fabry-Perot (FP) cavity. The back mirror of the FP cavity was formed using an integrated quarter wave reflector stack and exhibited a reflectivity of >95%. The front mirror was the natural air-semiconductor interface with a reflectivity of -30%. A reduction of the operating voltage, aiming at a high contrast, low insertion loss modulator is addressed in this paper. This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 7. Quantum Optoelectronics Held in Salt Lake City, Utah on 11-13 March 1991,' AD-A253 823, p185-188.