Temperature Dependence of the Resonant Tunneling Process

Temperature Dependence of the Resonant Tunneling Process

We use differential absorption spectroscopy to investigate the temperature dependence of the accumulated charge in a resonant tunneling diode. We find that the charge density is approximately constant between 10-300K, and that the electrons are thermalized with the lattice at all temperatures. This...

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Bibliographische Detailangaben
Hauptverfasser: Bar-Joseph, I, Gedalyahu, Y, Yacoby, A, Woodward, T. K, Chemla, D. S
Format: Report
Sprache:eng
Schlagworte:
ABSORPTION
CHARGE DENSITY
Component Reports
CONSTANTS
DENSITY
DIODES
ELECTRONS
Electrooptical and Optoelectronic Devices
ELECTROOPTICS
PHOTONS
RESONANCE
SPECTROSCOPY
SYMPOSIA
TEMPERATURE
TUNNEL DIODES
TUNNELING(ELECTRONICS)
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Beschreibung
Zusammenfassung:We use differential absorption spectroscopy to investigate the temperature dependence of the accumulated charge in a resonant tunneling diode. We find that the charge density is approximately constant between 10-300K, and that the electrons are thermalized with the lattice at all temperatures. This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p214-217.