Modified InAs Hall Elements

Modified InAs Hall Elements

This invention pertains to more sensitive and more stable electronic devices which can sense electrical and magnetic fields. The devices are characterized by InAs channels confined on both sides thereof by a wide band gap AlSb material; protective layers above the AlSb material; modulation doping ab...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Benett, Brian R, Boos, John B
Format: Report
Sprache:eng
Schlagworte:
ANTIMONY
BAND GAPS
DOPING
ELECTRIC FIELDS
Electrical and Electronic Equipment
Electricity and Magnetism
ELECTRONIC EQUIPMENT
HALL EFFECT
INDIUM ARSENIDES
MAGNETIC FIELDS
PATENT APPLICATIONS
TERNARY COMPOUNDS
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Beschreibung
Zusammenfassung:This invention pertains to more sensitive and more stable electronic devices which can sense electrical and magnetic fields. The devices are characterized by InAs channels confined on both sides thereof by a wide band gap AlSb material; protective layers above the AlSb material; modulation doping above the AlSb material; and layers of the InAs channel material containing 1 to 99 mol percent antimony, with the channel material being deposited in the form of alternating monolayers of InSb and InAs, of a ternary mixture of InAsSb.