A GaAs-AlGaAs Based Thyristor

A study of bipolar junction thyristors based on GaAs and AlGaAs materials for pulsed power switching applications is reported. Novel aspects of the device and fabrication processes required by the design are discussed, and preliminary results of the GaAs homojunction thyristors are presented and ana...

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Hauptverfasser:	Hur, J H, Hadizad, P, Gundersen, M A, Fetterman, H R
Format:	Report
Sprache:	eng
Schlagworte:	ALGAAS(ALUMINUM GALLIUM ARSENIDES) ALUMINUM GALLIUM ARSENIDES BIPOLAR JUNCTION THYRISTORS Electrical and Electronic Equipment FABRICATION GAAS(GALLIUM ARSENIDES) GALLIUM ARSENIDES JUNCTIONS PULSED POWER SWITCHING SWITCHING THYRISTORS
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Beschreibung
Zusammenfassung:	A study of bipolar junction thyristors based on GaAs and AlGaAs materials for pulsed power switching applications is reported. Novel aspects of the device and fabrication processes required by the design are discussed, and preliminary results of the GaAs homojunction thyristors are presented and analyzed. See also ADM002371. 2013 IEEE Pulsed Power Conference, Digest of Technical Papers 1976-2013, and Abstracts of the 2013 IEEE International Conference on Plasma Science. Held in San Francisco, CA on 16-21 June 2013. U.S. Government or Federal Purpose Rights License.