The Role of Deep Level Traps in the Optically Controlled Semi-Insulating GaAs Switch

A numerical solution for the transient photoconductivity in the laser-activated bulk semi-insulating GaAs switch has been obtained, in which the influence of EL2 and other traps on the optical generation rates and the recombination rates of free carriers has been determined. Calculated photocurrent pulses are compared with the experimental results of switching measurements under conditions of low laser intensity and low device electric field. The comparison shows that the EL2 model is sufficient to explain the large extrinsic photoconductivity which is observed. The dependence of the recovery on the various traps is discussed. See also ADM002371. Published in 2013 IEEE Pulsed Power Conference, Digest of Technical Papers 1976-2013, and Abstracts. Presented at the 2013 IEEE International Conference on Plasma Science Held in San Francisco, CA on 16-21 June 2013. U.S. Government or Federal Purpose Rights License