Effect of Defects on III-V MWIR nBn Detector Performance
Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on t...
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| creator | Taylor, Edward W Cardimona, David A Savich, G R Sidor, D E Du, X Morath, C P Cowan, V M Wicks, G W |
| description | Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.
Presented at SPIE Optical Engineering + Applications, 28 August 2014. Published in the Proceedings of SPIE, v9226 p92260R-1/92260R-6, 2014. The original document contains color images. |
| format | Report |
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Presented at SPIE Optical Engineering + Applications, 28 August 2014. Published in the Proceedings of SPIE, v9226 p92260R-1/92260R-6, 2014. The original document contains color images.</description><language>eng</language><subject>ABSORBERS(MATERIALS) ; ARCHITECTURE ; BARRIER ARCHITECTURE ; BARRIERS ; CHARGE DENSITY ; CONCENTRATION(COMPOSITION) ; DARK CURRENT ; DEFECTS(MATERIALS) ; DIFFUSION ; Electrical and Electronic Equipment ; EPITAXIAL GROWTH ; FABRICATION ; GROUP III COMPOUNDS ; GROUP V COMPOUNDS ; HETEROJUNCTIONS ; Infrared Detection and Detectors ; INFRARED DETECTORS ; IRRADIATION ; LATTICE DYNAMICS ; LATTICE MISMATCH ; MWIR(MIDWAVE INFRARED) ; NBN ; Optical Detection and Detectors ; PE611102A ; PERFORMANCE(ENGINEERING) ; PHOTODETECTORS ; PHOTODIODES ; SEMICONDUCTORS ; Solid State Physics ; TUNNELING(ELECTRONICS)</subject><creationdate>2014</creationdate><rights>Approved for public release; distribution is unlimited.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27567,27568</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/ADA625367$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Taylor, Edward W</creatorcontrib><creatorcontrib>Cardimona, David A</creatorcontrib><creatorcontrib>Savich, G R</creatorcontrib><creatorcontrib>Sidor, D E</creatorcontrib><creatorcontrib>Du, X</creatorcontrib><creatorcontrib>Morath, C P</creatorcontrib><creatorcontrib>Cowan, V M</creatorcontrib><creatorcontrib>Wicks, G W</creatorcontrib><creatorcontrib>ROCHESTER UNIV NY</creatorcontrib><title>Effect of Defects on III-V MWIR nBn Detector Performance</title><description>Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.
Presented at SPIE Optical Engineering + Applications, 28 August 2014. Published in the Proceedings of SPIE, v9226 p92260R-1/92260R-6, 2014. The original document contains color images.</description><subject>ABSORBERS(MATERIALS)</subject><subject>ARCHITECTURE</subject><subject>BARRIER ARCHITECTURE</subject><subject>BARRIERS</subject><subject>CHARGE DENSITY</subject><subject>CONCENTRATION(COMPOSITION)</subject><subject>DARK CURRENT</subject><subject>DEFECTS(MATERIALS)</subject><subject>DIFFUSION</subject><subject>Electrical and Electronic Equipment</subject><subject>EPITAXIAL GROWTH</subject><subject>FABRICATION</subject><subject>GROUP III COMPOUNDS</subject><subject>GROUP V COMPOUNDS</subject><subject>HETEROJUNCTIONS</subject><subject>Infrared Detection and Detectors</subject><subject>INFRARED DETECTORS</subject><subject>IRRADIATION</subject><subject>LATTICE DYNAMICS</subject><subject>LATTICE MISMATCH</subject><subject>MWIR(MIDWAVE INFRARED)</subject><subject>NBN</subject><subject>Optical Detection and Detectors</subject><subject>PE611102A</subject><subject>PERFORMANCE(ENGINEERING)</subject><subject>PHOTODETECTORS</subject><subject>PHOTODIODES</subject><subject>SEMICONDUCTORS</subject><subject>Solid State Physics</subject><subject>TUNNELING(ELECTRONICS)</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>2014</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZLBwTUtLTS5RyE9TcEkFsYoV8vMUPD09dcMUfMM9gxTynPKAMiVAmfwihYDUorT8otzEvORUHgbWtMSc4lReKM3NIOPmGuLsoZtSkpkcX1ySmZdaEu_o4mhmZGpsZm5MQBoAWkUpeQ</recordid><startdate>201408</startdate><enddate>201408</enddate><creator>Taylor, Edward W</creator><creator>Cardimona, David A</creator><creator>Savich, G R</creator><creator>Sidor, D E</creator><creator>Du, X</creator><creator>Morath, C P</creator><creator>Cowan, V M</creator><creator>Wicks, G W</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>201408</creationdate><title>Effect of Defects on III-V MWIR nBn Detector Performance</title><author>Taylor, Edward W ; Cardimona, David A ; Savich, G R ; Sidor, D E ; Du, X ; Morath, C P ; Cowan, V M ; Wicks, G W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_ADA6253673</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ABSORBERS(MATERIALS)</topic><topic>ARCHITECTURE</topic><topic>BARRIER ARCHITECTURE</topic><topic>BARRIERS</topic><topic>CHARGE DENSITY</topic><topic>CONCENTRATION(COMPOSITION)</topic><topic>DARK CURRENT</topic><topic>DEFECTS(MATERIALS)</topic><topic>DIFFUSION</topic><topic>Electrical and Electronic Equipment</topic><topic>EPITAXIAL GROWTH</topic><topic>FABRICATION</topic><topic>GROUP III COMPOUNDS</topic><topic>GROUP V COMPOUNDS</topic><topic>HETEROJUNCTIONS</topic><topic>Infrared Detection and Detectors</topic><topic>INFRARED DETECTORS</topic><topic>IRRADIATION</topic><topic>LATTICE DYNAMICS</topic><topic>LATTICE MISMATCH</topic><topic>MWIR(MIDWAVE INFRARED)</topic><topic>NBN</topic><topic>Optical Detection and Detectors</topic><topic>PE611102A</topic><topic>PERFORMANCE(ENGINEERING)</topic><topic>PHOTODETECTORS</topic><topic>PHOTODIODES</topic><topic>SEMICONDUCTORS</topic><topic>Solid State Physics</topic><topic>TUNNELING(ELECTRONICS)</topic><toplevel>online_resources</toplevel><creatorcontrib>Taylor, Edward W</creatorcontrib><creatorcontrib>Cardimona, David A</creatorcontrib><creatorcontrib>Savich, G R</creatorcontrib><creatorcontrib>Sidor, D E</creatorcontrib><creatorcontrib>Du, X</creatorcontrib><creatorcontrib>Morath, C P</creatorcontrib><creatorcontrib>Cowan, V M</creatorcontrib><creatorcontrib>Wicks, G W</creatorcontrib><creatorcontrib>ROCHESTER UNIV NY</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Taylor, Edward W</au><au>Cardimona, David A</au><au>Savich, G R</au><au>Sidor, D E</au><au>Du, X</au><au>Morath, C P</au><au>Cowan, V M</au><au>Wicks, G W</au><aucorp>ROCHESTER UNIV NY</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Effect of Defects on III-V MWIR nBn Detector Performance</btitle><date>2014-08</date><risdate>2014</risdate><abstract>Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.
Presented at SPIE Optical Engineering + Applications, 28 August 2014. Published in the Proceedings of SPIE, v9226 p92260R-1/92260R-6, 2014. The original document contains color images.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ABSORBERS(MATERIALS) ARCHITECTURE BARRIER ARCHITECTURE BARRIERS CHARGE DENSITY CONCENTRATION(COMPOSITION) DARK CURRENT DEFECTS(MATERIALS) DIFFUSION Electrical and Electronic Equipment EPITAXIAL GROWTH FABRICATION GROUP III COMPOUNDS GROUP V COMPOUNDS HETEROJUNCTIONS Infrared Detection and Detectors INFRARED DETECTORS IRRADIATION LATTICE DYNAMICS LATTICE MISMATCH MWIR(MIDWAVE INFRARED) NBN Optical Detection and Detectors PE611102A PERFORMANCE(ENGINEERING) PHOTODETECTORS PHOTODIODES SEMICONDUCTORS Solid State Physics TUNNELING(ELECTRONICS) |
| title | Effect of Defects on III-V MWIR nBn Detector Performance |
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