Effect of Defects on III-V MWIR nBn Detector Performance

Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on t...

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Bibliographische Detailangaben
Hauptverfasser:	Taylor, Edward W, Cardimona, David A, Savich, G R, Sidor, D E, Du, X, Morath, C P, Cowan, V M, Wicks, G W
Format:	Report
Sprache:	eng
Schlagworte:	ABSORBERS(MATERIALS) ARCHITECTURE BARRIER ARCHITECTURE BARRIERS CHARGE DENSITY CONCENTRATION(COMPOSITION) DARK CURRENT DEFECTS(MATERIALS) DIFFUSION Electrical and Electronic Equipment EPITAXIAL GROWTH FABRICATION GROUP III COMPOUNDS GROUP V COMPOUNDS HETEROJUNCTIONS Infrared Detection and Detectors INFRARED DETECTORS IRRADIATION LATTICE DYNAMICS LATTICE MISMATCH MWIR(MIDWAVE INFRARED) NBN Optical Detection and Detectors PE611102A PERFORMANCE(ENGINEERING) PHOTODETECTORS PHOTODIODES SEMICONDUCTORS Solid State Physics TUNNELING(ELECTRONICS)
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Zusammenfassung:	Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes. Presented at SPIE Optical Engineering + Applications, 28 August 2014. Published in the Proceedings of SPIE, v9226 p92260R-1/92260R-6, 2014. The original document contains color images.