Measuring Refractive Index Using the Focal Displacement Method (Postprint)

A simple technique is introduced for measuring the refractive index of plane-parallel samples having thickness of the order of a millimeter. The refractive index values are reported for six bulk semiconductors, each index measured at two infrared wavelengths using this method. The values are found to be within a few percent of those in literature for four semiconductors. The other two semiconductors were newly grown ternary alloys (CdMgTe and CdMnTe), for which the refractive index values have not been reported previously at the wavelengths studied here. Prepared in collaboration with UES Incorporated, Beavercreek, OH, and Leidos Corporation, Dayton, OH. Published in Applied Optics, v53 n17 p3748-3752, 10 Jun 2014.