Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design

A very broadband distributed amplifier was designed using a 0.13-micrometer gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of this circuit was performed as part of the fall 2011 Johns Hopkins University...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Penn, John E
Format:	Report
Sprache:	eng
Schlagworte:	BROADBAND DISTRIBUTED AMPLIFIERS Electrical and Electronic Equipment FABRICATION GALLIUM ARSENIDES HIGH ELECTRON MOBILITY TRANSISTORS LOW NOISE MONOLITHIC MICROWAVE INTEGRATED CIRCUITS RADIOFREQUENCY
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