Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design

A very broadband distributed amplifier was designed using a 0.13-micrometer gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of this circuit was performed as part of the fall 2011 Johns Hopkins University...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	Penn, John E
Format:	Report
Sprache:	eng
Schlagworte:	BROADBAND DISTRIBUTED AMPLIFIERS Electrical and Electronic Equipment FABRICATION GALLIUM ARSENIDES HIGH ELECTRON MOBILITY TRANSISTORS LOW NOISE MONOLITHIC MICROWAVE INTEGRATED CIRCUITS RADIOFREQUENCY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A very broadband distributed amplifier was designed using a 0.13-micrometer gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of this circuit was performed as part of the fall 2011 Johns Hopkins University Monolithic Microwave Integrated Circuit (MMIC) Design Course, taught by the author. The design approach is applicable to very broadband, low noise MMICs that could be used for a variety of radio frequency (RF) and microwave systems. The original document contains color images.