Direct Fabrication of a-Si:H Thin Film Transistor Arrays on Plastic and Metal Foils for Flexible Displays

In this paper we describe solutions to address critical challenges in direct fabrication of amorphous silicon thin film transistor (TFTs) arrays for high information content active matrix flexible displays for Army applications. For all flexible substrates a manufacturable handling protocol in autom...

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Hauptverfasser:	O'Rourke, S M, Loy, D E, Moyer, C, Bawolek, E J, Ageno, S K, O'Brien, B P, Marrs, M, Bottesch, D, Dailey, J, Naujokaitis, R, Kaminski, J P, Allee, D R, Venugopal, S M, Haq, J, Colaneri, N, Raupp, G B, Morton, D C, Forsythe, E W
Format:	Report
Sprache:	eng
Schlagworte:	AMORPHOUS MATERIALS ARRAYS COEFFICIENTS Electrical and Electronic Equipment ELECTRICAL INSULATION FABRICATION FDC(FLEXIBLE DISPLAY CENTER) FLEXIBLE MATERIALS FOILS(MATERIALS) INSTABILITY ISOLATION Laminates and Composite Materials MATRIX DISPLAYS METALS PLANAR STRUCTURES PLASTICS SILICON SYMPOSIA THIN FILMS TRANSISTORS
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Zusammenfassung:	In this paper we describe solutions to address critical challenges in direct fabrication of amorphous silicon thin film transistor (TFTs) arrays for high information content active matrix flexible displays for Army applications. For all flexible substrates a manufacturable handling protocol in automated display-scale equipment is required. For metal foil substrates the principal challenges are planarization and electrical isolation, and management of coefficient of thermal expansion induced stress (CTE mismatch) during TFT fabrication. For plastic substrates the principal challenge is dimensional instability management. See also ADM002187. Presented at the Army Science Conference (26th), held in Orlando, Florida on 1-4 December 2008. Prepared in collaboration with Army Research Laboratory (ARL), Adelphi, MD. The original document contains color images.