Threshold Voltage Instability in A-Si:H TFTS and the Implications for Flexible Displays and Circuits

After a brief review of the characteristics of electrical stress degradation of flexible, amorphous silicon thin film transistors, the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A cir...

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Bibliographische Detailangaben
Hauptverfasser:	Allee, D, Clark, L, Shringarpure, R, Venugopal, S, Darbanian, N, Li, Z, Bawolek, E, Baugh, K, Raupp, G, Forsythe, E, Morton, D
Format:	Report
Sprache:	eng
Schlagworte:	AMORPHOUS MATERIALS ARRAYS COMPLEMENTARY METAL OXIDE SEMICONDUCTORS COMPUTER AIDED DESIGN COMPUTER PROGRAMMING DIGITAL CIRCUITS Electrical and Electronic Equipment ELECTRICAL STRESS DEGRADATION Electrooptical and Optoelectronic Devices EXPERIMENTAL DATA FLEXIBLE STRUCTURES INTEGRATED SYSTEMS PROGRAMMABLE LOGIC Solid State Physics SYMPOSIA THIN FILMS THRESHOLD EFFECTS TRANSISTORS
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Zusammenfassung:	After a brief review of the characteristics of electrical stress degradation of flexible, amorphous silicon thin film transistors, the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented. Experimental results for a variety of flexible digital circuits including programmable logic arrays and memories are presented. Finally, we discuss the principal remaining challenges to building a fully flexible electronic system. See also ADM002187. Presnted at the Army Science Conference (26th) held in Orlando, Florida on 1-4 December 2008. Published in the Proceedings of the Army Science Conference (26th), December 2008. The original document contains color images.