Nanosecond Thermal Processing for Self-Aligned Silicon-on-Insulator Technology

Future radar and communications systems will have the need to use CMOS integrated circuits to provide increased analog and digital functions. Conventional CMOS technology has been locked into designing processes around polysilicon gate material because of the need for self-alignment. Low-resistance...

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Bibliographische Detailangaben
Hauptverfasser:	Ramirez, A D, Offord,, B W, Popp, S D Russell, J F Rowland, J D
Format:	Report
Sprache:	eng
Schlagworte:	ALIGNMENT ALUMINUM CAPACITANCE Coatings, Colorants and Finishes COMMUNICATION AND RADIO SYSTEMS CONTROL DIGITAL SYSTEMS DOPANT ACTIVATION DRAINAGE EXCIMER LASER FIELD-EFFECT TRANSISTOR FUNCTIONS GATES(CIRCUITS) INSULATION INTEGRATED CIRCUITS LASER ANNEALING LASERS MATERIALS MELTING POINT METALS N-CHANNEL METAL OXIDE SEMICONDUCTOR OPTIMIZATION OVERLAP POLYSILICONS PROCESSING RADAR RADIOFREQUENCY RESISTANCE SELF OPERATION SILICON COATINGS SILICON-ON-INSULATOR SOURCES SUBSTRATES THERMAL PROCESSING THERMAL PROPERTIES Thermodynamics THRESHOLD EFFECTS
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