Reduced Power Consumption in GaAs-Based Bipolar Cascade Lasers

Reduced Power Consumption in GaAs-Based Bipolar Cascade Lasers

A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. We investigate the current voltage characteristics of individual degenerately doped n(+) and p(+) regions grown by MBE and then place the most promising designs within the individual laser substructure...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Siskaninetz, W J, Dang, T N, Nelson, T R, Ehret, J E, Van Nostrans, J E
Format: Report
Sprache:eng
Schlagworte:
BIPOLAR CASCADE LASERS
BIPOLAR SYSTEMS
CASCADE STRUCTURES
EDGE EMITTING LASERS
ELECTROOPTICS
GALLIUM ARSENIDE LASERS
Lasers and Masers
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR JUNCTIONS
Solid State Physics
TUNNELING(ELECTRONICS)
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Beschreibung
Zusammenfassung:A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. We investigate the current voltage characteristics of individual degenerately doped n(+) and p(+) regions grown by MBE and then place the most promising designs within the individual laser substructures. This has resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.