InGaP/InGaAs-on-Ge Concentrator Solar Cell for Space Power Generation

Al(0.33)In(0.67)P has been chosen as the lattice-matched passivating front and back window layer of the 1.62 eV InGaP top cell. High-resolution X-ray diffraction (HRXRD) studies of this material grown by metal organic vapor phase epitaxy (MOVPE) in our laboratory show it to be of excellent crystalli...

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Bibliographische Detailangaben
1. Verfasser:	Sinharoy, Samar
Format:	Report
Sprache:	eng
Schlagworte:	ALLOYS ALUMINUM COMPOUNDS Astronautics BACK WINDOW CONCENTRATORS CRYSTAL LATTICES DOPING ELECTRIC GENERATORS Electric Power Production and Distribution EPITAXIAL GROWTH FRONT WINDOW GALLIUM ARSENIDES GALLIUM PHOSPHIDES GERMANIUM GROUP III-V COMPOUNDS HALL EFFECT HRXRD(HIGH RESOLUTION X RAY DIFFRACTION) INDIUM GALLIUM PHOSPHIDES/INDIUM GALLIUM ARSENIDES ON GERMANIUM INDIUM PHOSPHIDES LATTICE MATCHED MOVPE(METAL ORGANIC VAPOR PHASE EPITAXY) N TYPE SEMICONDUCTORS OXYGEN P TYPE SEMICONDUCTORS PASSIVATING POWER SUPPLIES SBIR(SMALL BUSINESS INNOVATION RESEARCH) SIMS(SECONDARY ELECTRON MASS SPECTROSCOPY) SOLAR CELLS SPACE POWER GENERATION SPACE SYSTEMS THIN FILMS X RAY DIFFRACTION
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Zusammenfassung:	Al(0.33)In(0.67)P has been chosen as the lattice-matched passivating front and back window layer of the 1.62 eV InGaP top cell. High-resolution X-ray diffraction (HRXRD) studies of this material grown by metal organic vapor phase epitaxy (MOVPE) in our laboratory show it to be of excellent crystalline quality. Hall effect measurements show that the Al(0.33)In(0.67)P films can be doped n-type (Si) up to 2x10(exp 19)/cu cm and p-type (Zn) to mid-10 (exp 18)/cu cm level. Secondary electron mass spectrometry (SIMS) analysis of the films revealed that the oxygen concentration in these films was in the low to mid-10(exp 17)/cu cm level. Although the oxygen level is slightly higher than that found in non-aluminum containing III-V alloy layers, it is not believed to be high enough to be detrimental to the performance of the InGaP top cell. However, we are continuing process improvement studies to reduce the oxygen level further.