Atomic Force Microscope Studies of CuCl Island Formation on CaF2 (111) Substrates

We have grown by molecular beam epitaxy (MBE) CuCl thin films at various thickness and substrate temperatures on CaF2 (111) substrates. Atomic Force Microscope (AFM) topographs reveal that islanding is the dominant growth mechanism. Quantitative analysis of the AFM data enabled us to determine the a...

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Bibliographische Detailangaben
Hauptverfasser:	Tong, W M, Snyder, E J, Willims, R S, Yanase, A, Segawa, Y, Anderson, M S
Format:	Report
Sprache:	eng
Schlagworte:	ATOMIC FORCE MICROSCOPE CALCIUM FLUORIDES COPPER CHLORIDE COPPER COMPOUNDS CORRELATION DEPOSITION DIFFUSION EXCITONS FUNCTIONS HEIGHT Inorganic Chemistry ISLAND FORMATION KINETICS LENGTH MOLECULAR BEAMS OPTICAL PROPERTIES Optics PARAMETERS Physical Chemistry PREDICTIONS QUANTITATIVE ANALYSIS QUANTUM WELLS SEMICONDUCTORS SUBSTRATES SURFACES TEMPERATURE THEORY THICKNESS THIN FILMS ZINCBLENDE
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Zusammenfassung:	We have grown by molecular beam epitaxy (MBE) CuCl thin films at various thickness and substrate temperatures on CaF2 (111) substrates. Atomic Force Microscope (AFM) topographs reveal that islanding is the dominant growth mechanism. Quantitative analysis of the AFM data enabled us to determine the amount of the substrate remaining exposed after the deposition as well as the total amount of CuCl deposited We calculated the reciprocal-space height correlation function h(q,t)2, for each of our films and compared them to the predictions of the Shadowing Growth Theory, which enabled us to extract the important kinetic parameter of surface diffusion length for the growth condition of each of the four films. Prepared for publication in Journal of Vacuum Science and Technology