An Oxygen Tracer Study of InP Oxidation

An Oxygen Tracer Study of InP Oxidation

The thermal oxidation process for InP results in a complex and process dependent oxide. From the observed self limiting behavior of the oxide growth, the rate limiting step is likely the diffusion of reaction species through the growing oxide film. O18 marker oxidation experiments with the resulting...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Liu, X, Denker, M S, Irene, E A
Format: Report
Sprache:eng
Schlagworte:
BEHAVIOR
DEPTH
DIFFUSION
GROWTH(GENERAL)
INTERFACES
IONS
LIMITATIONS
MASS SPECTROSCOPY
MIGRATION
OXIDATION
OXIDES
Physical Chemistry
PROFILES
RESPONSE
SUBSTRATES
SURFACES
THERMOCHEMISTRY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The thermal oxidation process for InP results in a complex and process dependent oxide. From the observed self limiting behavior of the oxide growth, the rate limiting step is likely the diffusion of reaction species through the growing oxide film. O18 marker oxidation experiments with the resulting secondary ion mass spectroscopy (SIMS) depth profiles reveal that the oxidation takes place at the oxide surface by the outward migration of In and P, rather than at the oxide substrate interface. Based on the available results possible models for the oxidation are proposed.