Reading and Writing of Photochemical Holes Using GaA1As Diode Lasers

Reading and Writing of Photochemical Holes Using GaA1As Diode Lasers

A current tuned (gallium aluminum arsenide) diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833 nm zero phonon line of the R' color center in LiF. Applications for reading and writing data into frequency domain optical memories base...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Pokrowsky,P, Moerner,W E, Chu,F, Bjorklund,G C
Format: Report
Sprache:eng
Schlagworte:
ALUMINUM ARSENIDES
COLOR CENTERS
CRYOGENICS
Diode lasers
DIODES
GALLIUM ARSENIDES
HOLES(OPENINGS)
LASERS
Lasers and Masers
MEMORY DEVICES
OPTICAL STORAGE
Photochemical holes
PHOTOCHEMICAL REACTIONS
Radiation and Nuclear Chemistry
TUNABLE LASERS
WUNR421001
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Beschreibung
Zusammenfassung:A current tuned (gallium aluminum arsenide) diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833 nm zero phonon line of the R' color center in LiF. Applications for reading and writing data into frequency domain optical memories based on photochemical hole burning are discussed. (Author)