A Proximity effect Correction Program for Electron Beam Lithography

A Proximity effect Correction Program for Electron Beam Lithography

A proximity effect correction program implementing the self-consistent correction algorithm has been developed. The program calculates recommended electron beam exposures given as input, the pattern to be written and the beam scattering parameters. Predicted dose patterns resulting from the recommen...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Berkowitz,H L, Lux,R A
Format: Report
Sprache:eng
Schlagworte:
ALGORITHMS
COMPUTATIONS
COMPUTER AIDED DESIGN
Computer Programming and Software
COMPUTER PROGRAMS
CONSISTENCY
CORRECTIONS
DISTORTION
DOSIMETRY
Electron beam lithography
ELECTRON BEAMS
ELECTRON FLUX
EXPOSURE(GENERAL)
GEOMETRY
INPUT
INTEGRATED CIRCUITS
Particle Accelerators
PATTERNS
PE61101A
PHOTOLITHOGRAPHY
PREDICTIONS
Printing and Graphic Arts
Proximity effect
PROXR computer program
RANGE(DISTANCE)
RESISTORS
RESOLUTION
SCATTERING
SIZES(DIMENSIONS)
SUBSTRATES
THICKNESS
TRANSVERSE
WU495
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A proximity effect correction program implementing the self-consistent correction algorithm has been developed. The program calculates recommended electron beam exposures given as input, the pattern to be written and the beam scattering parameters. Predicted dose patterns resulting from the recommended exposures are also calculated. Results of sample calculations are shown. (Author)