Secondary Ion Mass Spectrometric Image Depth Profiling for Three-Dimensional Elemental Analysis

Secondary Ion Mass Spectrometric Image Depth Profiling for Three-Dimensional Elemental Analysis

Three-dimensional elemental microcharacterization of the near-surface regions of solid samples is performed by combining the dynamically eroding nature of secondary ion mass spectrometry (SIMS), spatially resolved multi-area, multi-element ion intensity data, and digital image processing. Multiple s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Patkin,Adam J, Morrison,George H
Format: Report
Sprache:eng
Schlagworte:
DIGITAL SYSTEMS
IMAGE PROCESSING
INTEGRATED SYSTEMS
ION IMPLANTATION
IONS
MASS SPECTROMETERS
METAL OXIDE SEMICONDUCTORS
Physical Chemistry
PROFILES
SAMPLING
SECONDARY
SOLIDS
SURFACES
THREE DIMENSIONAL
WUNR051736
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Beschreibung
Zusammenfassung:Three-dimensional elemental microcharacterization of the near-surface regions of solid samples is performed by combining the dynamically eroding nature of secondary ion mass spectrometry (SIMS), spatially resolved multi-area, multi-element ion intensity data, and digital image processing. Multiple simultaneous depth profiles and three-dimensional image profiles are used to analyze a metal-oxide semiconductor (MOS) integrated circuit and ion implant samples. (Author)