Technology Assessment and Radiation Effects Characterization of Integrated Injection Logic

Integrated Injection Logic (I2L) has emerged as a bipolar LSI technology which offers high packing density, low power dissipation, reasonable speed and simplicity in processing. In an isolated form I2L can be incorporated on the same chip with linear devices and/or T2L or ECL input/output buffering. Another feature of I2L is the wide range of power and hence speed over which circuits may be operated. The simple double-diffused form of I2L using lateral pnp transistor injectors has limited speed capability which makes it somewhat unattractive for lsi computer applications. Therefore many second generation forms of I2L have emerged, mainly to increase speed but also to further increase packing density and reduce power. Early radiation effects characterization studies on first generation I2L indicated that both the neutron and total dose failure levels of I2L is substantially lower than other bipolar technologies. The changes incorporated into the second generation I2L processes have, for the most part greatly increased the neutron and total dose failure levels based on test results presented herein. This report presents a technology assessment of I2L including a discussion of the various second generation processes and commercial product developments by U.S. Companies. An evaluation of radiation effects on first and second generation I2L is presented along with neutron, total dose and dose rate tests results on various I2L test structures and devices.