Time Dependent Electron and Ion Flow in Pinched Beam Diodes

The time dependent impedance behavior of large-aspect-ratio, pinched-electron-beam diodes is studied using a computer simulation model. The results from a series of particle code simulations are used to construct a picture of the diode impedance as a function of voltage. This description is then use...

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Bibliographische Detailangaben
Hauptverfasser:	Lee,Roswell, Goldstein,Shyke A
Format:	Report
Sprache:	eng
Schlagworte:	Acoustics ASPECT RATIO COMPUTERIZED SIMULATION Diode impedance DIODES(ELECTRON TUBES) Electrical and Electronic Equipment ELECTRICAL IMPEDANCE ELECTRON BEAMS FOCUSING Hollow cathodes IONIC CURRENT PE62704H PINCH EFFECT Pinched beam diodes Plasma diodes Plasma Physics and Magnetohydrodynamics PLASMAS(PHYSICS) Relativistic electrons RELATIVITY THEORY Self consistent fields TIME DEPENDENCE WU12 WU77H0226K
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Beschreibung
Zusammenfassung:	The time dependent impedance behavior of large-aspect-ratio, pinched-electron-beam diodes is studied using a computer simulation model. The results from a series of particle code simulations are used to construct a picture of the diode impedance as a function of voltage. This description is then used to compare calculated diode current with actual measured values, and good agreement is found. The code is also used to study dynamic pinch formation and ion current generation. A focusing model for the ions is presented. (Author)