Extensions of Models for Transistor Failure Probability Due to Neutron Fluence

Extensions of Models for Transistor Failure Probability Due to Neutron Fluence

Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow nonzero origins for all random variables concerned. Further, these models are genera...

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Bibliographische Detailangaben
Hauptverfasser: Michalowicz,Joseph V, Ausman,George A , Jr
Format: Report
Sprache:eng
Schlagworte:
BIPOLAR TRANSISTORS
Circuit susceptibility
Electrical and Electronic Equipment
FAILURE(ELECTRONICS)
LPN-HDL-242621
NEUTRONS
Nuclear Radiation Shield, Protection & Safety
PE62704H
PROBABILITY
RADIATION HARDENING
WU09
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Zusammenfassung:Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow nonzero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results. (Author)