IC Fabrication Using Electron-Beam Technology

Slice processing and process development on the 256-bit bipolar RAMs has continued this quarter. Four lots of bipolar RAMs are presently in process and the oxidation, epitaxial and diffusion parameters from these lots have been measured. A comparison between the measured parameters and their specifi...

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Bibliographische Detailangaben
Hauptverfasser:	Varnell,Gilbert L, Williamson,Ronald A, Brewer,Terry, Bartelt,John L, Robbins,Roger A
Format:	Report
Sprache:	eng
Schlagworte:	256 BIT BIPOLAR RAM BIPOLAR TRANSISTORS CHIPS(ELECTRONICS) DIFFUSION Electrical and Electronic Equipment Electron beam technology ELECTRON BEAMS EPITAXIAL GROWTH ETCHING FABRICATION INTEGRATED CIRCUITS LPN-DA-2769631 Mfg & Industrial Eng & Control of Product Sys OXIDATION Particle Accelerators RANDOM ACCESS COMPUTER STORAGE Slices(Semiconductors) SUBSTRATES
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Beschreibung
Zusammenfassung:	Slice processing and process development on the 256-bit bipolar RAMs has continued this quarter. Four lots of bipolar RAMs are presently in process and the oxidation, epitaxial and diffusion parameters from these lots have been measured. A comparison between the measured parameters and their specified values has been made. The processes from polished substrate through DUF O.R. have been significantly modified to reduce cost and processing steps. Work on improving the alignment marker process is continuing. (Author)