Study of the Effects of Radiation on the Electrical and Optical Properties of HgCdTe

This report presents the results of experimental and theoretical investigations of the effects of electron, neutron, and gamma irradiations on the optical and electrical properties of the alloy semiconductor HgCdTe. The objective of the study is to obtain sufficient radiation effects data to enable prediction of the radiation response of infrared detector devices fabricated from HgCdTe. Section 2 discusses the results of a 14-MeV neutron irradiation at 80 K on n-type Hg(0.8)Cd(0.2)Te. The results of 80 K 5-MeV electron and fission neutron irradiations and isochronal anneal of p-type Hg(0.8)Cd(0.2) Te are discussed in Section 3. In Section 4 the results of various types of irradiations at 10 and 80 K are summarized and presented in terms of damage parameters that are then applied to HgCdTe photoconductive detectors to predict response degradation. Section 4 also includes a qualitative discussion of possible damage mechanisms in HgCdTe photovoltaic detectors. See also report dated 31 Dec 74, AD-A008 050.