Observations of Slip Distributions in Alpha SiC Crystals

The growth of large single crystals of silicon carbide has been the objective of many laboratories throughout the world. However, semiconductor device applications are less dependent on size than on defect distributions, and understanding when such defects occurr in the growth process may be important in the obtention of defect free silicon carbide. In this paper the authors report on slip distributions in three alpha-SiC crystals of the same polytype but of different national origin and of different dopant. The primary investigative tool was x-ray topography with ancillary optical evaluations. Pub. in Proceedings of Silicon Carbide, 1973.