Study of the Effects of Radiation on the Electrical and Optical Properties of HgCdTe

This report discusses the results of experimental and theoretical investigations of the effects of electron, neutron, and gamma irradiation on the optical and electrical properties of the alloy semiconductor HgCdTe. These effects are of major interest in this program, since this data can be used to predict the radiation response of devices fabricated from HgCdTe. Section 2 discusses experimental methods used in this effort. The results of a 10K neutron irradiation of an n-type sample, QM 48-19, are presented. Changes in lifetime, carrier density, Hall mobility, and conductivity at 80K were studied as a function of electron energy between 2 and 30 MeV. Preirradiation temperature dependence measurements of carrier density, Hall mobility, conductivity, and steady-state photoconductivity of a p-type HgCdTe sample, QM 1, are presented. This sample was irradiated at 80K with 5-MeV electrons, which resulted in type conversion from p-type to n-type. The final section presents mobility and lifetime analysis and correlates the effects observed for neutron, gamma, and electron irradiations. See also report dated 30 Jun 74, AD-A003 390.