Recent Progress of B-Ga2O3 MOSFETs for Power Electronic Applications

We review AFRLs major device results in the fabrication of -Ga2O3 MOSFETs over the past 2 years. This includes: (1) AFRLs standard fabrication process, (2)improvement of current density, (3) improvement of contact resistance, (4) review of the critical field measurement and(5) review of enhancement...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Moser,Neil A, Fitch,Robert C, Walker,Dennis E, Green,Andrew J, Chabak,Kelson D, Heller,Eric, McCandless,Jonathan P, Tetlak,Stephen E, Crespo,Antonio, Leedy,Kevin D, Jessen,Gregg H
Format:	Report
Sprache:	eng
Schlagworte:	B-Ga2O3 MOSFETs band gaps chemical vapor deposition crystal growth current density dry etching electric fields Electrical and Electronic Equipment fabrication molecular beam epitaxy power electronics simulations
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