Recent Progress of B-Ga2O3 MOSFETs for Power Electronic Applications

We review AFRLs major device results in the fabrication of -Ga2O3 MOSFETs over the past 2 years. This includes: (1) AFRLs standard fabrication process, (2)improvement of current density, (3) improvement of contact resistance, (4) review of the critical field measurement and(5) review of enhancement...

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Hauptverfasser:	Moser,Neil A, Fitch,Robert C, Walker,Dennis E, Green,Andrew J, Chabak,Kelson D, Heller,Eric, McCandless,Jonathan P, Tetlak,Stephen E, Crespo,Antonio, Leedy,Kevin D, Jessen,Gregg H
Format:	Report
Sprache:	eng
Schlagworte:	B-Ga2O3 MOSFETs band gaps chemical vapor deposition crystal growth current density dry etching electric fields Electrical and Electronic Equipment fabrication molecular beam epitaxy power electronics simulations
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Zusammenfassung:	We review AFRLs major device results in the fabrication of -Ga2O3 MOSFETs over the past 2 years. This includes: (1) AFRLs standard fabrication process, (2)improvement of current density, (3) improvement of contact resistance, (4) review of the critical field measurement and(5) review of enhancement mode operation of a -Ga2O3finFET. 42nd Annual (gomactech 17) Government Microcircuit Applications and Critical Technology Conference , 20 Mar 2017, 23 Mar 2017, See also AD1034309 - 42nd Annual Gomactech Conference (GOMACTech 17) Government Microcircuit Applications And Critical Technology Conference. Technologies For Secure Spectrum Access From Dc To Light. Held At The Grand Sierra Resort, Reno, Nevada, March 20-23, 2017.