Ensuring the Trust of NAND Flash Memory: Going Beyond the Published Interface

Ensuring the Trust of NAND Flash Memory: Going Beyond the Published Interface

This work describes techniques that can be usedto measure subtle changes in the memory cells of advancedFlash memories caused by program/erase stress, radiationexposure, or process variation without the use ofmanufacturer-provided test modes. This work alsodescribes techniques for making measurement...

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Hauptverfasser: Roach,Austin H, Gadlage,Matthew J, Ingalls,James D, Williams,Aaron, Duncan,Adam R, Kay,Matthew J
Format: Report
Sprache:eng
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Zusammenfassung:This work describes techniques that can be usedto measure subtle changes in the memory cells of advancedFlash memories caused by program/erase stress, radiationexposure, or process variation without the use ofmanufacturer-provided test modes. This work alsodescribes techniques for making measurements on devicesharvested from COTS assemblies without publicallyavailable datasheets. Government Microcircuit Applications and Critical Technology Conference (41st) (GOMACTech-16) , 14 Mar 2016, 17 Mar 2016, See also AD1023107.