HIGH RESOLUTION STUDIES IN THE DECAY OF BA133 WITH SEMICONDUCTOR COUNTERS

A reinvestigation of some properties of the decay of Ba133 was carried out with high-resolution equipments based on lithium-drifted silicon-and germanium-semiconductor counters. Electromagnetic transitions of 383.7, 356.2, 302.8, 276.5, 223.1, 160.6, 80.9, 79.7, and 53.4 keV have been observed. The...

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Bibliographische Detailangaben
Hauptverfasser: Bosch, H. E, Haverfield, A. J, Szichman, E, Abecasis, S. M
Format: Report
Sprache:eng
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