HIGH RESOLUTION STUDIES IN THE DECAY OF BA133 WITH SEMICONDUCTOR COUNTERS

A reinvestigation of some properties of the decay of Ba133 was carried out with high-resolution equipments based on lithium-drifted silicon-and germanium-semiconductor counters. Electromagnetic transitions of 383.7, 356.2, 302.8, 276.5, 223.1, 160.6, 80.9, 79.7, and 53.4 keV have been observed. The K-conversion coefficients and K/LM ratios for these transitions were determined either by electron-gamma and gamma-gamma coincidences or by comparison of the intensities of the electron-conversion and gamma-ray peaks. From these values, the multipolarities for the nine transitions were deduced. The electron-capture branching ratios to the four excited levels of Cs133 were derived and the corresponding log ft values are presented. A decay scheme with an unique spin-parity assignment is proposed. (Author)