Use of Photostimulated Luminescence for Studying the Characteristics of Radiation-Induced Electron Centers

The kinetics of recombination processes in a solid body depends in great measure on the probability of repeated localizations (RL) of the charge carriers in pre-radiation and radiation induced microdefects. Repeated localizations can determine in a broad time range, buildup and luminescence attenuation rates. This is extremely important in an applied relationship. Existing methods for studying RL are not always effective. The article proposes a method which permits determination of RL probability and calculation of the amount of thermal ionization energy epsilon and frequency factor (P sub 0) for centers in which secondary electron captures occur. Edited trans. of Radiatsionnaya Fizika Nemetallicheskikh Kristallov. Sbornik Statei (USSR) v3 n3 p66-71 1971, by Paul J. Reiff.