Effect of Formation Conditions on the Electrical Properties of Epitaxial P-N Junctions in Gallium Arsenide
Electrical properties were investigated of p-n junction in GaAs obtained by the method of liquid epitaxy. The electrical characteristics of p-n junctions obtained in a narrow temperature interval depend on the epitaxy temperature, which is explained by the corresponding dependences of the solidus cu...
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| Zusammenfassung: | Electrical properties were investigated of p-n junction in GaAs obtained by the method of liquid epitaxy. The electrical characteristics of p-n junctions obtained in a narrow temperature interval depend on the epitaxy temperature, which is explained by the corresponding dependences of the solidus curves of the corresponding quasibinary systems. The crystallographic orientation of the substrate significantly influences the electrical and optical properties of laser junctions. Acceptor impurities exert various effects on the electrical and optical properties of epitaxial laser semiconductor diodes. (Modified author abstract)
Trans. of Voprosy Sbornik Arsenid Galliya (USSR) n3 p152-162 1970. |
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