Producing Ohmic Contacts on Semiconductors Using Laser Welding (Section 86)

Producing Ohmic Contacts on Semiconductors Using Laser Welding (Section 86)

The paper discusses ohmic contacts produced on gallium phosphide and gallium arsenide by using a laser welding technique. Edited trans. of mono. Novoe v Elektrofizicheskoi i Elektrokhimicheskoi Obrakotke Materialov, n.p., 1972 p305-307, by Ray E. Zarza.

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Bibliographische Detailangaben
Hauptverfasser: Kupriyanov,I. V, Kucherenko,N. M
Format: Report
Sprache:eng
Schlagworte:
Electric contacts
Electrical and Electronic Equipment
Gallium arsenides
Gallium compounds
Gallium phosphides
Lasers
Ohmic contacts
Phosphides
Semiconductor devices
Solid State Physics
Translations
USSR
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Beschreibung
Zusammenfassung:The paper discusses ohmic contacts produced on gallium phosphide and gallium arsenide by using a laser welding technique. Edited trans. of mono. Novoe v Elektrofizicheskoi i Elektrokhimicheskoi Obrakotke Materialov, n.p., 1972 p305-307, by Ray E. Zarza.