GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION

The lumped model technique of representing semiconductor device response to radiation was applied to diodes, bipolar transistors and integrated circuit elements. The lumped model formalism was first developed by approximating the equations governing electron and hole flow in a semiconductor, and the feasibility of the technique was established by the representation of diodes and transistors. The analysis was then extended to the detailed large-signal response and saturated storage time of the bipolar transistor and monolithic transistor element, and the general form of the monolithic diffused resistor element. With the use of computer aids, the electrical and radiation response of these devices was calculated solely from electrical and geometrical parameters. The lumped model technique has been established as an accurate, practical, and straight-forward method of deriving the mathematical model for a semiconductor device, calculating the electrical and ionizing radiation-induced transient response, and predicting the parameter degradation of displacement damage. Representation of the discrete bipolar transistor, and the bipolar transistor and resistor junction-isolated monolithic integrated circuit elements establish the necessary basis for the analysis of integrated circuits. (Author)