A FUNDAMENTAL STUDY OF EPITAXY BY FLASH EVAPORATION

A study was made of the conditions under which films of III-V compounds can be evaporated and deposited stoichiometrically onto a number of substrates. The crystalline nature and crystal quality of films of seven of the III-V compounds deposited onto Ge, CaF2, and GaAs substrates were studied with r...

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Bibliographische Detailangaben
1. Verfasser:	Richards,John L
Format:	Report
Sprache:	eng
Schlagworte:	ABSORPTION SPECTRA ANTIMONY ALLOYS ARSENIC ALLOYS CRYSTAL STRUCTURE ELECTRICAL PROPERTIES ELECTRON DIFFRACTION EPITAXIAL GROWTH EVAPORATION FLASH EVAPORATION GALLIUM ALLOYS GALLIUM PHOSPHIDE GERMANIUM GUNN EFFECT IMPURITIES INDIUM ALLOYS INDIUM ANTIMONIDE MICA PHASE STUDIES PHOSPHORUS ALLOYS SEMICONDUCTING FILMS SEMICONDUCTOR DIODES SOLID SOLUTIONS THIN FILMS VAPOR PLATING X RAY DIFFRACTION
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Beschreibung
Zusammenfassung:	A study was made of the conditions under which films of III-V compounds can be evaporated and deposited stoichiometrically onto a number of substrates. The crystalline nature and crystal quality of films of seven of the III-V compounds deposited onto Ge, CaF2, and GaAs substrates were studied with reference to changes in such parameters as evaporator and substrate temperature, lattice mismatch with substrate, and substrate orientation. Conditions were determined for the preparation of epitaxial films. Diodes were prepared in the deposited films by diffusion and alloying techniques. Electrical characteristics of these diodes were measured and found to be comparable with those in bulk material.