HIGH POWER SEMICONDUCTOR TR DEVICES

HIGH POWER SEMICONDUCTOR TR DEVICES

The report covers work performed on both X sub Lband and K sub U-band phases. The effort on the contract has resulted in the delivery of K sub u band and S sub L band experimental models. These units were delivered according to contract specifications. Complete electrical data at high power and low...

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Bibliographische Detailangaben
1. Verfasser: BRUNTON,R H ,III
Format: Report
Sprache:eng
Schlagworte:
ELECTRONIC SWITCHES
K BAND
LIMITERS
MICROWAVE EQUIPMENT
PERFORMANCE(ENGINEERING)
RADIOFREQUENCY POWER
SEMICONDUCTOR DIODES
TRANSMITTER RECEIVERS
VARACTOR DIODES
X BAND
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Zusammenfassung:The report covers work performed on both X sub Lband and K sub U-band phases. The effort on the contract has resulted in the delivery of K sub u band and S sub L band experimental models. These units were delivered according to contract specifications. Complete electrical data at high power and low level are given. Additional results are given for investigations of diodes and improved designs in both the K sub u and X sub L bands. (Author)