INVESTIGATION OF THE ELECTRICAL AND OPTICAL PROPERTIES OF JUNCTIONS IN VAPOR-DEPOSITED COMPOUND SEMICONDUCTORS

INVESTIGATION OF THE ELECTRICAL AND OPTICAL PROPERTIES OF JUNCTIONS IN VAPOR-DEPOSITED COMPOUND SEMICONDUCTORS

Germanium was epitaxially deposited on gallium arsenide by means of the hydrogen reduction of GeC14. Above 800C, germanium reacted with the GaAs seed to form a black powder. Proper deposition was observed below about 750C. Nonetheless, cross doping of the Ge layer by gallium was observed even at dep...

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Bibliographische Detailangaben
1. Verfasser: MINDEN,Henry T
Format: Report
Sprache:eng
Schlagworte:
ARSENIC ALLOYS
EPITAXIAL GROWTH
GALLIUM ALLOYS
GERMANIUM
HYDROGEN
IMPURITIES
LASERS
PHYSICAL PROPERTIES
REDUCTION(CHEMISTRY)
SEMICONDUCTORS
TIN
TUNNEL DIODES
VAPOR PLATING
ZINC
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Zusammenfassung:Germanium was epitaxially deposited on gallium arsenide by means of the hydrogen reduction of GeC14. Above 800C, germanium reacted with the GaAs seed to form a black powder. Proper deposition was observed below about 750C. Nonetheless, cross doping of the Ge layer by gallium was observed even at deposition temperatures as low as 670C; the heterojunctions showed tunnel diode characteristics. Deliberately doped junctions of p-Ge on n-GaAs showed the I-V characteristics of Ge junctions, while the photovoltaic response was that of a GaAs junction. Epitaxial lasers were made by the deposition of zinc-doped epitaxial layers on n-type GaAs substrates. It was necessary to codeposit tin along with the zinc. The threshold current density was about 13,000 amps/ sq. cm. (Author)