MATERIAL PROCESSING AND PHENOMENA INVESTIGATION OF FUNCTIONAL ELECTRONIC BLOCKS

Contents: High resistivity GaAs and deposition on GaAs technology of three-dimensional arrays, investigation of phenomena in II-VI compounds, GaP and GaAsxP (1-x) in epitaxial devices.

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Bibliographische Detailangaben
1. Verfasser:	Johnson,Rowland E
Format:	Report
Sprache:	eng
Schlagworte:	ARSENIC ALLOYS CADMIUM COMPOUNDS CHEMICAL ELEMENTS CRYSTAL GROWTH DIFFUSION EPITAXIAL GROWTH GALLIUM ALLOYS IMPURITIES INTERMETALLIC COMPOUNDS MANUFACTURING MOLECULAR ELECTRONICS PHOSPHORUS ALLOYS PHOTOELECTRIC MATERIALS PHOTOELECTRONS PHOTOSENSITIVITY SEMICONDUCTING FILMS SEMICONDUCTOR DIODES SEMICONDUCTORS SILICON SULFIDES SURFACE PROPERTIES TRANSPORT PROPERTIES VAPOR PLATING
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Beschreibung
Zusammenfassung:	Contents: High resistivity GaAs and deposition on GaAs technology of three-dimensional arrays, investigation of phenomena in II-VI compounds, GaP and GaAsxP (1-x) in epitaxial devices.