CYCLOTRON RESONANCE EXPERIMENTS

CYCLOTRON RESONANCE EXPERIMENTS

Microwave cyclotron resonance and other experi ments have been conducted for purposes of study ing band structure and transport properties of several semiconductors and semimetals including Ge, Si, Te, alpha-Sn, Sb and CdS. In addition to microwave experiments at 3 cm, 1.2 cm and .4 cm wavelengths,...

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Bibliographische Detailangaben
Hauptverfasser: Dexter, R.N, Baer, W.S, Mendum, J.H, Halloran, M.H
Format: Report
Sprache:eng
Schlagworte:
ANTIMONY
CADMIUM COMPOUNDS
CRYSTAL STRUCTURE
CYCLOTRON RESONANCE PHENOMENA
DIAMONDS
EPITAXIAL GROWTH
GERMANIUM
HIGH FREQUENCY
K BAND
LEAD COMPOUNDS
MEASUREMENT
MICROWAVES
ORGANIC COMPOUNDS
PHOTO
POSITIONING DEVICES (MACHINERY)
SEMICONDUCTORS
SILICON
STRESSES
SULFIDES
SYMMETRY (CRYSTAL
TELLURIUM
TIN
TRANSPORT PROPERTIES
ZINC COMPOUNDS
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Beschreibung
Zusammenfassung:Microwave cyclotron resonance and other experi ments have been conducted for purposes of study ing band structure and transport properties of several semiconductors and semimetals including Ge, Si, Te, alpha-Sn, Sb and CdS. In addition to microwave experiments at 3 cm, 1.2 cm and .4 cm wavelengths, experiments on galvanomagnetic coefficient measurements and deHaas-van Alphen measurements were carried out. Some experiments involved the application of large uniaxial stresses to Ge and Si and other techniques have centered on the use of rapid modulation of the intensity of light used to excite free carriers in semiconductors. Each of these areas of research is described briefly in terms of what was attempted and what can be stated about definite results. (Author)