ACTIVE THIN FILM CIRCUIT FUNCTIONS

The work performed in the first three quarters are reviewed which included efforts to produce single crystal films of silicon on polycrystal line ceramic substrates suitable for use in active circuit functions. It describes in more detail the work of the fourth quarter which has included some attemp...

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1. Verfasser:	Breckenridge, Robert G
Format:	Report
Sprache:	eng
Schlagworte:	CHEMICAL DEPOSITION GLASS OXIDES PYROLYSIS SILICON SUBSTRATES(ELECTRONIC) SUBSTRATES(ELECTRONICS) TANTALUM THIN FILM ELECTRONICS THIN FILMS TUNGSTEN
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creator	Breckenridge, Robert G
description	The work performed in the first three quarters are reviewed which included efforts to produce single crystal films of silicon on polycrystal line ceramic substrates suitable for use in active circuit functions. It describes in more detail the work of the fourth quarter which has included some attempts at device fabrication. Finally, some of the significant results and con clusions arrived at are discussed and summarized. (Author)
format	Report
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It describes in more detail the work of the fourth quarter which has included some attempts at device fabrication. Finally, some of the significant results and con clusions arrived at are discussed and summarized. (Author)</description><language>eng</language><subject>CHEMICAL DEPOSITION ; GLASS ; OXIDES ; PYROLYSIS ; SILICON ; SUBSTRATES(ELECTRONIC) ; SUBSTRATES(ELECTRONICS) ; TANTALUM ; THIN FILM ELECTRONICS ; THIN FILMS ; TUNGSTEN</subject><creationdate>1963</creationdate><rights>APPROVED FOR PUBLIC RELEASE</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,776,881,27544,27545</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/AD0418340$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Breckenridge, Robert G</creatorcontrib><creatorcontrib>UNION CARBIDE CORP PARMA OH</creatorcontrib><title>ACTIVE THIN FILM CIRCUIT FUNCTIONS</title><description>The work performed in the first three quarters are reviewed which included efforts to produce single crystal films of silicon on polycrystal line ceramic substrates suitable for use in active circuit functions. It describes in more detail the work of the fourth quarter which has included some attempts at device fabrication. Finally, some of the significant results and con clusions arrived at are discussed and summarized. (Author)</description><subject>CHEMICAL DEPOSITION</subject><subject>GLASS</subject><subject>OXIDES</subject><subject>PYROLYSIS</subject><subject>SILICON</subject><subject>SUBSTRATES(ELECTRONIC)</subject><subject>SUBSTRATES(ELECTRONICS)</subject><subject>TANTALUM</subject><subject>THIN FILM ELECTRONICS</subject><subject>THIN FILMS</subject><subject>TUNGSTEN</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1963</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZFBydA7xDHNVCPHw9FNw8_TxVXD2DHIO9QxRcAv1A0r5-wXzMLCmJeYUp_JCaW4GGTfXEGcP3ZSSzOT44pLMvNSSeEcXAxNDC2MTA2MC0gDdLR9u</recordid><startdate>19630531</startdate><enddate>19630531</enddate><creator>Breckenridge, Robert G</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>19630531</creationdate><title>ACTIVE THIN FILM CIRCUIT FUNCTIONS</title><author>Breckenridge, Robert G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_AD04183403</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1963</creationdate><topic>CHEMICAL DEPOSITION</topic><topic>GLASS</topic><topic>OXIDES</topic><topic>PYROLYSIS</topic><topic>SILICON</topic><topic>SUBSTRATES(ELECTRONIC)</topic><topic>SUBSTRATES(ELECTRONICS)</topic><topic>TANTALUM</topic><topic>THIN FILM ELECTRONICS</topic><topic>THIN FILMS</topic><topic>TUNGSTEN</topic><toplevel>online_resources</toplevel><creatorcontrib>Breckenridge, Robert G</creatorcontrib><creatorcontrib>UNION CARBIDE CORP PARMA OH</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Breckenridge, Robert G</au><aucorp>UNION CARBIDE CORP PARMA OH</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>ACTIVE THIN FILM CIRCUIT FUNCTIONS</btitle><date>1963-05-31</date><risdate>1963</risdate><abstract>The work performed in the first three quarters are reviewed which included efforts to produce single crystal films of silicon on polycrystal line ceramic substrates suitable for use in active circuit functions. It describes in more detail the work of the fourth quarter which has included some attempts at device fabrication. Finally, some of the significant results and con clusions arrived at are discussed and summarized. (Author)</abstract><oa>free_for_read</oa></addata></record>
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subjects	CHEMICAL DEPOSITION GLASS OXIDES PYROLYSIS SILICON SUBSTRATES(ELECTRONIC) SUBSTRATES(ELECTRONICS) TANTALUM THIN FILM ELECTRONICS THIN FILMS TUNGSTEN
title	ACTIVE THIN FILM CIRCUIT FUNCTIONS
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