APPLICATION OF TUNNELING TO ACTIVE DIODES

Gallium arsenide, gallium phosphide, gallium antimonide, and indium phosphide have been transported and deposited, with controlled doping, either as large crystallites when seeded on the walls of the tube, or as epitaxial layers when deposited on seed crystals. Material was transported simultaneously from different compounds and deposited as a ixed compound, e.g. Ga(As,P). Compounds were synthesized from the elements and deposited, e.g. GaP. P-n junctions, including low-current-density tunnel junctions, were prepared by the deposition of epitaxial layers. Heterojunctions were formed by deposition of compounds on dissimilar substrates. A discussion of the relationship between trapping and noise effect in GaAs tunnel diodes is presented. Data are presented on a diode in which these properties are measured in the negative resistance region. (Author)