THEORETICAL AND EXPERIMENTAL STUDIES CONCERNING RADIATION DAMAGE IN SELECTED COMPOUND SEMICONDUCTORS

THEORETICAL AND EXPERIMENTAL STUDIES CONCERNING RADIATION DAMAGE IN SELECTED COMPOUND SEMICONDUCTORS

ISOTHERMAL ANNEALING EXPERIMENTS ON NEUTRON-IRRADIATED N-TYPE GaAs were analyzed in terms of two independent monomolecular processes. Since a similar behavior was observed in electron-irradiated GaAs, direct comparisons were made between the two types of damage. Isochronal annealing studies on neutr...

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Bibliographische Detailangaben
Hauptverfasser: AUKERMAN,L.W, BAROODY,E.M
Format: Report
Sprache:eng
Schlagworte:
ABSORPTION
ARSENIDES
CADMIUM COMPOUNDS
DAMAGE
ELECTRON IRRADIATION
EXPERIMENTAL DATA
FAST NEUTRONS
GALLIUM COMPOUNDS
HEAT TREATMENT
INDIUM COMPOUNDS
NEUTRON REACTIONS
OPTICS
PHOSPHIDES
RADIATION EFFECTS
SEMICONDUCTORS
SULFIDES
TELLURIDES
THEORY
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Zusammenfassung:ISOTHERMAL ANNEALING EXPERIMENTS ON NEUTRON-IRRADIATED N-TYPE GaAs were analyzed in terms of two independent monomolecular processes. Since a similar behavior was observed in electron-irradiated GaAs, direct comparisons were made between the two types of damage. Isochronal annealing studies on neutron-irradiated n-type InP indicate that this material may have a more complex direct structure than does GaAs when irradiated at or near room temperature. Opticaltransmission data obtained from neutron-irradiated GaAs, CdT E, AND CdS are discussed in terms of a model in which the damaged sites consist of localized regions of a different phase. (Author)