Electron Velocity Enhancement in Polarization-doped AlGaN

Three-dimensional electron gas/slabs (3DEG/S) can be obtained using the technique of 3-dimensional polarization-doping in graded AlGaN semiconductor layer on GaN. Transport characteristics of the graded AlGaN are investigated experimentally by means of nanosecond-pulsed measurements. The measured current-voltage dependences were used to determine drift velocity data assuming no change in electron density upon applied electric field. The velocity results are compared with that of GaN and ungraded AlGaN/GaN. Also, the experimental results are compared with those of Monte Carlo simulation.