High electron mobility in randomly oriented polycrystalline BaSi2 films formed through radio-frequency sputtering

High electron mobility in randomly oriented polycrystalline BaSi2 films formed through radio-frequency sputtering

Semiconducting barium disilicide (BaSi2) is a promising material for solar cell and thermoelectric applications; hence, high-mobility films are of great importance. In this study, we achieved substantially high electron mobilities exceeding 103 cm2 V−1 s−1 at 300 K in randomly oriented polycrystalli...

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Veröffentlicht in:AIP advances 2022-04, Vol.12 (4), p.045120-045120-5
Hauptverfasser: Koitabashi, Ryota, Kido, Kazuki, Hasebe, Hayato, Mesuda, Masami, Toko, Kaoru, Suemasu, Takashi
Format: Artikel
Sprache:eng
Schlagworte:
Barium compounds
Disilicides
Electron mobility
Electron transport
Grain boundaries
Oxidation
Photovoltaic cells
Polycrystals
Radio frequency
Solar cells
Sputtering
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Zusammenfassung:Semiconducting barium disilicide (BaSi2) is a promising material for solar cell and thermoelectric applications; hence, high-mobility films are of great importance. In this study, we achieved substantially high electron mobilities exceeding 103 cm2 V−1 s−1 at 300 K in randomly oriented polycrystalline BaSi2 films formed on Si3N4 insulating films at 600 °C through radio-frequency sputtering. The BaSi2 films consisted of small grains (
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0087879