Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-metal transition threshold voltage to the incident wave. The detection concept is demonstrated through actuation of biased VO 2 switches encapsulated in a pair of coupled antennas by interrupting coplanar waveguides for broadband measurements, on silicon substrates. Ultimately, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on VO 2 switches in an astable spiking circuit. The fabricated sensors show responsivities of around 66.3 MHz.W −1 at 1 μW, with a low noise equivalent power of 5 nW.Hz −0.5 at room temperature, for a footprint of 2.5 × 10 −5 mm 2 . The responsivity in static characterizations is 76 kV.W −1 . Based on experimental statistical data measured on robust fabricated devices, we discuss stochastic behavior and noise limits of VO 2 -based spiking sensors applicable for wave power sensing in mm-wave and sub-terahertz range. Vanadium dioxide is a strongly correlated material interesting for its ultra-fast resistive switching controlled by an electric-field-driven insulator-metal transition. Here, VO 2 stochastic oscillator power sensors for mm-wave to sub-THz radiation are demonstrated, displaying high responsivities, low noise, and a small scalable footprint.