Predictive Evaluation of Atomic Layer Deposition Characteristics for Synthesis of Al2O3 thin Films

The atomic layer deposition (ALD) synthesis process is being heavily researched for its conformality, high aspect ratio with thickness control, selective area deposition versatility, and variety of low-temperature oxide, nitride, and transition metal dichalcogenide (TMDC) precursors for a multitude of applications. Repeatability and reproducibility are essential, along with large-scale deposition with high throughput from the commercialization perspective. JMP and Design of Experiment (DoE) are industrially practiced tools to study and reduce process variations. This research paper demonstrates the application of DoE in JMP for the predictive evaluation of ALD for the synthesis of Al2O3.