Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluc...

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Veröffentlicht in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-10, Vol.11 (10), p.2759
1. Verfasser: Lee, Jonghwan
Format: Artikel
Sprache:eng
Schlagworte:
Energy
Fano factor
gate tunneling current
Mathematical models
MOSFETs
Noise
Noise prediction
Performance prediction
sequential tunneling
Shot noise
source-to-drain tunneling current
Tunnel construction
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Zusammenfassung:A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11102759